High-resistance contact detection test mode

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C714S724000, C714S734000, C714S745000

Reexamination Certificate

active

06910164

ABSTRACT:
A method for testing a semiconductor memory device includes forcing the device into a logic state configuration that does not occur during normal operation of the device. The method may also include holding the logic state configuration for a user-variable length of time. In an embodiment, the device testing method includes flowing a direct current through a first input node of a bi-stable latch. This node may be electrically arranged between a node coupled to a voltage source and a node coupled to a circuit ground potential. An embodiment of a memory device may include testmode circuitry adapted to maintain a pair of bitlines at logic states that are not maintained during ordinary operation of the device. A system for testing a semiconductor memory device may include testmode circuitry adapted to force a pair of bitlines to the same logic state for a user-determined length of time.

REFERENCES:
patent: 5610866 (1997-03-01), McClure

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-resistance contact detection test mode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-resistance contact detection test mode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-resistance contact detection test mode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3464867

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.