High-rate dry-etch of indium and tin oxides by hydrogen and halo

Details High-rate dry-etch of indium and tin oxides by hydrogen and halo High-rate dry-etch of indium and tin oxides by hydrogen and halo

1995-06-07

1997-03-04

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

1566271, 216 60, B44C 122

Patent

active

056076029

ABSTRACT:
An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

REFERENCES:
patent: 4544444 (1985-10-01), Chang
patent: 4750980 (1988-06-01), Hynecek
patent: 4898766 (1990-02-01), Tamamura et al.
patent: 5094978 (1992-03-01), Miyagaki et al.
patent: 5286337 (1994-02-01), Tsou
patent: 5318664 (1994-06-01), Saia et al.
"Silicon Processing For The VLSI Era-Volume 1"; Wolf et al.; Lattice Press; Sunset Beach, Ca.; .COPYRGT.1986; pp. 565-567.
Z. Calahorra, E. Minami, R. M. White, R. S. Muller, Reactive Ion Etching of Indium-Tin-Oxide Films, J. Electrochem. Soc., vol. 136, No. 6, Jun. 1989, pp. 1839-1840.
ULVAC Technical Journal, No. 42, 1995,pp. 31-36.
L. A. Coldren & J. A. Rentschler; Directional reactive-ion-etching of InP with Cl.sub.2 containing gases; J. Vac. Sci. Technol., 19(2), Jul./Aug. 1981, pp. 225-230.
G. Bradshaw & A. J. Hughes, Etching methods for indium oxide/tin oxide films; Thin Solid Films, 33 (1976) L5-L8.
T. Ratcheva & M. Nanova, Etching of In.sub.2 O.sub.3 :Sn and In.sub.2 O.sub.3 :Te thin films in dilute HCl and H.sub.3 PO.sub.4 ; Thin Solid Films 141 (1986) L87-L89.
M. Inoue et al., Patterning Characteristics of ITO Thin Films; Japanese Journal of Applied Physics, vol. 28, No. 2, Feb., 1989, pp. 274-278.
M. Mohri et al., Plasma Etching of ITO Thin Films Using a CH.sub.4 /H.sub.2 Gas Mixture; Japanese Journal of Applied Physics, vol. 29, No. 10, Oct., 1990, pp. L1932-L1935.
I. Adesida et al., Etching of indium tin oxide in methane/hydrogen plasmas; J. Vac. Sci. Technol. B9(6), Nov./Dec. 1991, pp. 3551-3554.

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