Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-19
2007-06-19
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S442000, C438S770000
Reexamination Certificate
active
08593949
ABSTRACT:
This invention improves the quality of gate oxide dielectric layers using a two-pronged approach, thus permitting the use of much thinner silicon dioxide gate dielectric layers required for lower-voltage, ultra-dense integrated circuits. In order to eliminate defects caused by imperfections in bulk silicon, an in-situ grown epitaxial layer is formed on active areas following a strip of the pad oxide layer used beneath the silicon nitride islands used for masking during the field oxidation process. By growing an epitaxial silicon layer prior to gate dielectric layer formation, defects in the bulk silicon substrate are covered over and, hence, isolated from the oxide growth step. In order to maintain the integrity of the selective epitaxial growth step, the wafers are maintained in a controlled, oxygen-free environment until the epitaxial growth step is accomplished. In order to eliminate defects caused by a native oxide layer, the wafers are maintained in a controlled, oxygen-free environment until being subjected to elevated temperature in a controlled, oxidizing environment. In one embodiment, the oxidizing environment comprises diatomic oxygen, while in another embodiment, the oxidizing environment comprises diatomic oxygen and ozone.
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Lee Ruojia R.
Thakur Randhir P. S.
Micro)n Technology, Inc.
Nguyen Thanh
Schwegman Lundberg Woessner & Kluth P.A.
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