High-purity alkali etching solution for silicon wafers and...

Details High-purity alkali etching solution for silicon wafers and... High-purity alkali etching solution for silicon wafers and...

2007-10-30

2007-10-30

Vinh, Lan (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

C216S038000, C216S067000, C216S088000, C216S089000, C252S079100, C438S471000, C438S691000, C438S692000, C438S749000

Reexamination Certificate

active

11020832

ABSTRACT:
A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution contains sodium hydroxide containing 1 ppb or less of the elements Cu, Ni, Mg, and Cr, 5 ppb or less of the elements Pb and Fe, 10 ppb or less of the elements Al, Ca, and Zn, and 1 ppm or less of chloride, sulfate, phosphate, and nitrogen compounds other than nitrate and nitrite, and containing 0.01 to 10 wt % of nitrate and/or nitrite.

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Patent Abstracts of Japan corres. to JP 11-162953.
Patent Abstracts of Japan corres. to JP -11-150106.
Fumio Shimura, “Semiconductor Silicon Crystal Technology”, Academic Press, 1989, pp. 182-197.
Patent Abstract of Japan corresponding to JP9-78276, 1998.

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