High pressure release device for semiconductor fabricating equip

Coating apparatus – Gas or vapor deposition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118692, 118708, 137 6819, 137 6823, 137 6825, 220 892, C23C 1600

Patent

active

060631988

ABSTRACT:
The present invention provides an improved device, system, and method for handling accidental explosions in a substrate processing chambers typically used in chemical vapor deposition (CVD). In particular, the invention channels the force from an explosion into alternate pathways leading away from the substitute processing chamber. In one embodiment, the high pressure release device for a semiconductor manufacturing system comprises of a diaphragm adapted to burst above a predetermined pressure. When installed in the system, the diaphragm is in fluid contact with the substrate processing chamber and covers the entrance to an exhaust passage which channels excess pressure away from the chamber.

REFERENCES:
patent: 3612391 (1971-10-01), Knoos
patent: 3709239 (1973-01-01), Morck, Jr.
patent: 4207913 (1980-06-01), Filke, Jr.
patent: 4208375 (1980-06-01), Bard
patent: 4505289 (1985-03-01), Wilson
patent: 4621655 (1986-11-01), Roche
patent: 4949671 (1990-08-01), Davis et al.
patent: 5620659 (1997-04-01), Revesz
patent: 5653885 (1997-08-01), Jameson et al.
patent: 5871813 (1997-03-01), Pham
patent: 5885356 (1999-03-01), Zhao et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High pressure release device for semiconductor fabricating equip does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High pressure release device for semiconductor fabricating equip, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High pressure release device for semiconductor fabricating equip will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-255418

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.