High pressure plasma treatment method and apparatus

Details High pressure plasma treatment method and apparatus High pressure plasma treatment method and apparatus

1994-02-28

1995-10-24

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 1566441, 1566511, 1566571, 156345, H01L 21306, B44C 122, C03C 1500

Patent

active

054606896

ABSTRACT:
A method of precleaning a wafer including the steps of placing the wafer in a plasma chamber; flowing a gas into the plasma chamber; establishing a plasma in the chamber at a first pressure; after establishing the plasma, plasma etching the wafer at the first pressure for a first period of time; transitioning to a second pressure that is different from the first pressure; plasma etching the wafer at the second pressure for a second period of time; and after the second period of time has elapsed, discontinuing plasma etching at the second pressure.

REFERENCES:
patent: 4698130 (1987-10-01), Restall et al.
patent: 5163458 (1992-11-01), Monroe
patent: 5296094 (1994-03-01), Shan et al.
patent: 5318667 (1994-06-01), Kumihashi et al.
Ohsaki et al., Proc. 2nd Intl. Symp. on ISSP '93 Tokyo, 1993.
Raaijmakers et al., Technical Proc. Semicon Japan SEMI, 1992.

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