High-pressure anneal process for integrated circuits

Details High-pressure anneal process for integrated circuits High-pressure anneal process for integrated circuits

1996-01-22

1999-04-20

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438795, 438660, 438663, H01L 21324

Patent

active

058952748

ABSTRACT:
This invention embodies an improved process for annealing integrated circuits to repair fabrication-induced damage. An integrated circuit is annealed in a pressurized sealed chamber in which a forming gas comprising hydrogen is present. Pressurization of the chamber reduces the contribution made by the final anneal step to total thermal exposure by increasing the diffusion rate of the hydrogen into the materials from which the integrated circuit is fabricated. Ideally, the forming gas contains, in addition to hydrogen, at least one other gas such as nitrogen or argon that will not react with hydrogen and, thus, reduce the danger of explosion. However, the integrated circuit may be annealed in an ambiance containing only hydrogen gas that is maintained at a pressure greater than ambient atmospheric pressure.

REFERENCES:
patent: 4154873 (1979-05-01), Hickox et al.
patent: 5425843 (1995-06-01), Saul et al.
patent: 5494860 (1996-02-01), McDevitt et al.
patent: 5520785 (1996-05-01), Evans et al.
patent: 5720828 (1998-02-01), Strom-Olsen et al.

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