High power semiconductor device having a Schottky barrier diode

Details High power semiconductor device having a Schottky barrier diode High power semiconductor device having a Schottky barrier diode

2005-03-22

2005-03-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S492000

Reexamination Certificate

active

06870223

ABSTRACT:
A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode in an n well region where a source region, a drain region, and a p well region of a lateral MOSFET. A Schottky barrier diode constituting a majority carrier device is connected in parallel with a PN junction capable of being forward-biased so that the PN junction is not forward-biased so that minority carriers are not generated, and thereby suppressing parasitic effects.

REFERENCES:
patent: 4811065 (1989-03-01), Cogan
patent: 5286995 (1994-02-01), Malhi
patent: 5925910 (1999-07-01), Menegoli
patent: 6133107 (2000-10-01), Menegoli
patent: 6242787 (2001-06-01), Nakayama et al.
patent: 10-284731 (1998-10-01), None

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