High permeability composite films to reduce noise in high...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S662000

Reexamination Certificate

active

06846738

ABSTRACT:
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of high permeability metal lines are formed on the first layer of insulating material. The pair of high permeability metal lines include composite hexaferrite films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. And, the method includes forming a second layer of electrically conductive material on the second layer of insulating material.

REFERENCES:
patent: 3816673 (1974-06-01), Miya
patent: 4308421 (1981-12-01), Bogese, II
patent: 4372032 (1983-02-01), Collins et al.
patent: 4640871 (1987-02-01), Hayashi et al.
patent: 4749888 (1988-06-01), Sakai et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 4962476 (1990-10-01), Kawada
patent: 5019728 (1991-05-01), Sanwo et al.
patent: 5128962 (1992-07-01), Kerslake et al.
patent: 5135889 (1992-08-01), Allen
patent: 5165046 (1992-11-01), Hesson
patent: 5223808 (1993-06-01), Lee et al.
patent: 5352998 (1994-10-01), Tanino
patent: 5363550 (1994-11-01), Aitken et al.
patent: 5415699 (1995-05-01), Harman
patent: 5450026 (1995-09-01), Morano
patent: 5510758 (1996-04-01), Fujita et al.
patent: 5521536 (1996-05-01), Yamashita et al.
patent: 5619159 (1997-04-01), Sasaki et al.
patent: 5656548 (1997-08-01), Zavracky et al.
patent: 5729047 (1998-03-01), Ma
patent: 5772153 (1998-06-01), Abaunza et al.
patent: 5811984 (1998-09-01), Long et al.
patent: 5880601 (1999-03-01), Kanazawa et al.
patent: 5910684 (1999-06-01), Sandhu et al.
patent: 6022787 (2000-02-01), Ma
patent: 6075383 (2000-06-01), Terletzki
patent: 6133621 (2000-10-01), Gaibotti et al.
patent: 6143616 (2000-11-01), Geusic et al.
patent: 6226599 (2001-05-01), Namiki
patent: 6255852 (2001-07-01), Forbes et al.
patent: 6281042 (2001-08-01), Ahn et al.
patent: 6373740 (2002-04-01), Forbes et al.
patent: 6420778 (2002-07-01), Sinyansky
patent: 6433408 (2002-08-01), Anjo et al.
patent: 6545338 (2003-04-01), Bothra et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6569757 (2003-05-01), Weling et al.
patent: 6570248 (2003-05-01), Ahn et al.
patent: 6600339 (2003-07-01), Forbes et al.
patent: 6692898 (2004-02-01), Ning
patent: 20010000428 (2001-04-01), Abadeer et al.
patent: 20030176050 (2003-09-01), Forbes et al.
Arnoldussen, Thomas C., “A Modular Transmission Line/Reluctance Head Model”,IEEE Transactions on Magnetics,vol. 24,(Nov. 1988),pp. 2482-2484.
Hsu, Yimin , et al., “High frequency field permeability of patterned Ni80Fe20 and Ni45Fe55 thin films”,Journal of Applied Physics,(Jun. 2001),pp. 6808-6810.
Hsu, et al., “Low temperature fired NiCuZn ferrite”,IEEE Transactions on Magnetics, 30(6), (1994),4875-4877.
Johnson, H. W., et al., “High Speed Digital Design”,A Handbook of Black Magic,Prentice Hall PTR, Upper Saddle River, New Jersey,(1993),pp. 422 & 426.
Lee, K. , et al., “Modeling and Analysis of Multichip Module Power Supply Planes”,IEEE Transactions on Components, Packaging, and Manufacturing Technology,vol. 18, No. 4, (1995),pp. 628-639.
Senda, M , “Permeability Measurement of Soft Magnetic Films at High Frequency and Multilayering Effect”,IEEE Translation Journal on Magnetics in Japan,vol. 8, No. 3, (Mar. 1993),pp. 161-168.
Thomas, M. , et al., “VLSI Multilevel Micro-Coaxial Interconnects for High Speed Devices”,IEEE International Electron Devices Meeting,(1990),55-58.
Webb, Bucknell C., et al., “High-frequency permeability of laminated and unlaminated, narrow, thin-film magnetic stripes (invited)”,Journal of Applied Physics,(1991),pp. 5611, 5613, 5615.
Webb, Bucknell C., et al., “The high field, high frequency permeability of narrow, thin-film magnetic stripes”,IEEE Transactions of Magnetics,vol. 27,(1991),pp. 4876-4878.
Zhang, H. C., et al.,High Technology Letters(China),10(115), (2000),96-97.
Zhang, Hongguo , et al., “Investigation on Structure and Properties of Low-Temperature Sintered Composite Ferrites”,Materials Research Bulletin, 35,(2000),2207-2215.
Johnson, H. ,In: A Handbook of Black Magic,Prentice-Hall. Inc., New Jersey, ISBN 0-13-395724-1,(1993),pp. 66-71, 194-197.
Rabaey, J. M.,Digital Integrated Circuits, A Design Perspective,Prentice Hall, Upper Saddle River, New Jersey, ISBN 0-13-178609-1,(1996),pp. 482-493.
Ramo, S. , “Fields and Waves in Communication Electronics”,John Wiley&Sons, Inc., New York, 3rd ed.,(1994),428-433.

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