High performance SiGe:C HBT with phosphorous atomic layer...

Details High performance SiGe:C HBT with phosphorous atomic layer... High performance SiGe:C HBT with phosphorous atomic layer...

2011-02-22

2011-02-22

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S172000, C438S775000, C438S202000, C438S313000, C257S019000

Reexamination Certificate

active

07892915

ABSTRACT:
A base structure for high performance Silicon Germanium:Carbon (SiGe:C) based heterojunction bipolar transistors (HBTs) with phosophorus atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe:C spacer layer. During the ALD process, the percent concentrations of Germanium (Ge) and carbon (C) are substantially matched and phosphorus is a preferred dopant. The improved SiGe:C HBT is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

REFERENCES:
patent: 5567638 (1996-10-01), Lin et al.
patent: 5793109 (1998-08-01), Nakamura
patent: 6255149 (2001-07-01), Bensahel et al.
patent: 6323525 (2001-11-01), Noguchi et al.
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6709941 (2004-03-01), Fujimaki
patent: 6723621 (2004-04-01), Cardone et al.
patent: 6750119 (2004-06-01), Chu et al.
patent: 6800522 (2004-10-01), Lee
patent: 6800552 (2004-10-01), Elers et al.
patent: 7145167 (2006-12-01), Chu
patent: 2002/0109135 (2002-08-01), Murota et al.
patent: 2002/0163013 (2002-11-01), Toyoda et al.
patent: 2002/0185708 (2002-12-01), Coolbaugh et al.
patent: 2003/0201461 (2003-10-01), Sato et al.
patent: 2003/0207593 (2003-11-01), Derderian et al.
patent: 2004/0048439 (2004-03-01), Soman et al.
patent: 05102177 (1993-04-01), None
B. Tillack, “Atomic control of doping during SiGe Epitxay”, Apr. 15, 1998 Thin Solid Films vol. 318 Issues 1-2 pp. 1-5.
P. Beillard, “N2 as carrier gas: an alternative to H2 for enchanced epitaxy of Si, SiGe, and SiGe:C”, Mar. 15, 2004 Applied Surface Science vol. 224 Issues 1-4 pp. 31-35.
N. Sugii, “Atomic layer doping in SiGe/Si heterostructures by two-step solid phase epitaxy”, Apr. 1999 Japanese Jorunal of Applied Physics vol. 38 pp. 2424-2426.
B. Tillack, “High Performance SiGe:C HBTs using atomic layer base doping”, Mar. 15, 2004 Applied Surface Science vol. 224 Issues 1-4 pp. 55-58.
Y. Shimamune, “Atomic layer adsorption of P on Si(100) and Ge (100) by PH3 using ultraclean low pressure chemical vaopr deposition”, Aug. 1, 2000 Applied Surface Science vols. 162-163 pp. 390-394.
P.Beillard, “N2 as a carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe, and SiGe:C”, Mar. 15, 2004 Applied Surface Science vol. 224 Issues 1-4 pp. 31-35.
B. Tillack, “High Performance SiGe:C HBT's using atomic layer base doping”, Mar. 15, 2004 Applied Surface Science vol. 224 Issues 1-4 pp. 55-58.
B. Tillack , “Atomic Control of doping during SiGe Epitaxy”, Apr. 15, 1998 Thin Solid Films vol. 318 Issues 1-2 pp. 1-5.
Beillard, P “N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe, and SiGe:C” Applied Surface Science vol. 224, Issues 1-4, Mar. 15, 2004 pp. 31-35.
Jay P. John, et al., “Optimization of a SiGe:C HBT in a BiCMOS Technology for Low Power Wireless Applications”, Digital DNA Laboratories, 4 pages.
Bernd Tillack, et al., “Atomic layer processing for doping of SiGe”, Thin Solid Films (2005), 5 pages.
B. Tillack, et al., “Atomic layer doping of SiGe—fundamentals and device applications”, Thin Solid Films 369 (2000), p. 189-194.
B. Tillack, et al., “Atomic layer doping of SiGe by low pressure (rapid thermal) chemical vapor deposition”, Thin Solid Films 294 (1997), p. 15-17.
Y. Shimamune, et al., “Atomic-layer doping in Si by alternately supplied PH3 and SiH4”, Thin Solid Films 380 (2000), p. 134-136.
“SiGe:C Technology”, Motorola, 2001, 2 pages.
Yosuke Shimamune, et al., “Formation of heavily P-doped Si epitaxial film on Si( 1 0 0) by multiple atomic-layer doping technique”, Applied Surface Science 224 (2004), p. 202-205.
“SiGeC Heterojunction Bipolar Transistors” Doctoral Thesis by Erdal Suvar, Stockholm, Sweden, 2003, Laboratory of Solid State Devices, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), 73 pages.

Affiliated with

Also associated with

Rating

High performance SiGe:C HBT with phosphorous atomic layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High performance SiGe:C HBT with phosphorous atomic layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance SiGe:C HBT with phosphorous atomic layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2640690