High performance schottky-barrier-source asymmetric MOSFETs

Details High performance schottky-barrier-source asymmetric MOSFETs High performance schottky-barrier-source asymmetric MOSFETs

2011-01-04

2011-01-04

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21425, C257SE21634, C438S149000

Reexamination Certificate

active

07863143

ABSTRACT:
The present invention, in one embodiment, provides a semiconductor device including a semiconducting body including a schottky barrier region at a first end of the semiconducting body, a drain dopant region at the second end of the semiconducting body, and a channel positioned between the schottky barrier region and the drain dopant region. The semiconducting device may further include a gate structure overlying the channel of the semiconducting body. Further, a drain contact may be present to the drain dopant region of the semiconducting body, the drain contact being composed of a conductive material and in direct physical contact with a portion of a sidewall of the semiconducting body having a dimension that is less than a thickness of the semiconducting body in which the drain dopant region is positioned.

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