High performance mosfet transistor fabrication technique

Details High performance mosfet transistor fabrication technique High performance mosfet transistor fabrication technique

1997-07-18

1999-10-19

Fahmy, Wael M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, 438299, 438305, 438306, 438307, 438516, 257336, 257344, 257408, H01L 21336

Patent

active

059703474

ABSTRACT:
A semiconductor fabrication process in which nitrogen is incorporated into the transistor gate without significantly increasing the resistivity of the source/drain region. The incorporation of nitrogen into the gate structure substantially reduces the migration of impurity dopants from the silicon gate into the transistor channel region resulting in a more stable and reliable transistor. In one embodiment, a tail of the nitrogen impurity distribution incorporated into the gate structure extends into the channel region of the semiconductor substrate. In this embodiment, the nitrogen within the channel region prevents excessive lateral diffusion of source/drain impurities thereby permitting the fabrication of deep sub-micron transistors.

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patent: 4774197 (1988-09-01), Haddad et al.
patent: 4947228 (1990-08-01), Gabara
patent: 5451807 (1995-09-01), Fujita
patent: 5756381 (1998-05-01), Buynoski
T. Kuroi et al., "Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 micron Dual Gate CMOS" IEDM 93 (1993) pp. 325-328.
S. M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons (New York) 1985 pp. 38, 351-2.

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