High performance MOSFET and method of forming the same using sil

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438592, 438585, 438287, H01L 21336

Patent

active

061401676

ABSTRACT:
A method is presented for forming a transistor wherein a silicide layer is formed upon an impurity region of a semiconductor substrate. After forming the silicide layer, a gate structure is preferably formed upon an exposed portion of the semiconductor substrate; however, the silicide layer may be formed after forming the gate structure. In order to form the gate structure, a layer of sacrificial material is first formed above the semiconductor substrate. An opening is then patterned through the layer of sacrificial material such that a portion of the semiconductor substrate is exposed. The gate structure preferably includes a metal gate conductor and a metal oxide gate dielectric.

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