Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257S408000, C257S344000, C257S900000, C257SE29267
Reexamination Certificate
active
11181521
ABSTRACT:
A semiconductor device suffering fewer current crowding effects and a method of forming the same are provided. The semiconductor device includes a substrate, a gate over the substrate, a gate spacer along an edge of the gate and overlying a portion of the substrate, a diffusion region in the substrate wherein the diffusion region comprises a first portion and a second portion between the first portion and the gate spacer. The first portion of the diffusion region has a recessed top surface. The semiconductor device further includes a silicide layer on the diffusion region, and a cap layer over at least the silicide layer. The cap layer provides a strain to the channel region of the semiconductor device.
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Tsai Ching-Wei
Wang Chih-Hao
Wang Ta-Wei
Landau Matthew C.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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