Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-21
1995-03-14
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257385, 257387, H01L 2910, H01L 2968
Patent
active
053979095
ABSTRACT:
An improved device fabrication method and transistor structure 36 provide shallow, heavily doped, source/drain junction regions 64 and a uniformly doped lower gate region 50 having a high concentration of dopants efficiently distributed near the gate electrode/gate interface 51. The gate, source, and drain terminals of transistor 36 may be interconnected to other neighboring or remote devices through the use of reacted refractory metal interconnect segments 98 and 100. Transistor structure 36 of the present invention may be constructed in an elevated source/drain format to include elevated source/drain junction regions 87 which may be fabricated simultaneous with a primary upper gate electrode region 88. This elevated source/drain junction feature is provided without added device processing complexity.
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Pfiester et al., "A Self-Aligned Elevated Source/Drain MOSFET", IEEE Electron Device Letters, vol. 11, No. 9, Sep., 1990, pp. 365-367.
Donaldson Richard L.
Hiller William E.
James Andrew J.
Meier Stephen D.
Rutkowski Peter T.
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