High performance/high density BICMOS process

Details High performance/high density BICMOS process High performance/high density BICMOS process

1992-06-17

2000-06-06

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438203, 438205, 257370, H01L 218238

Patent

active

06071767&

ABSTRACT:
An integrated circuit using high-performance bipolar and CMOS transistor elements on a single chip is fabricated by a simplified process requiring minimal, if any, changes in the process used for forming either type of device in accordance with a variety of possible device designs. The method according to the invention makes maximal use of self-aligned and self-masking processes to reduce the number of processing steps. The number of processing steps is further reduced by performing some steps concurrently on different device types. Further, the masking steps which are employed are reasonably misregistration tolerant, resulting in high manufacturing yield for the process. Consequently, the process according to the invention substantially eliminates the existence of trade-offs between element performance, integration density and process complexity and cost when plural technologies are integrated on the same chip.

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