High performance GaAs field effect transistor structure

Details High performance GaAs field effect transistor structure High performance GaAs field effect transistor structure

1999-10-21

2000-07-04

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438267, 438571, 438572, 438172, 438180, 438181, 438176, 438597, 438576, 438604, 438606, H01L 2128, H01L 213205, H01L 2144

Patent

active

060837829

ABSTRACT:
An improved GaAs MESFET includes a source contact ohmically coupled to a buffer layer or substrate to stabilize band bending at the interface of the active layer and buffer layer or substrate when an RF signal is applied to a gate electrode.

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