High performance FET with laterally thin extension

Details High performance FET with laterally thin extension High performance FET with laterally thin extension

2005-08-23

2005-08-23

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S413000

Reexamination Certificate

active

06933577

ABSTRACT:
Field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETs. The FETs have a device channel and a gate above the device channel with a doped source/drain extension at said each end of the thin channel. A portion of a low resistance material layer (e.g., a silicide layer) is disposed on source/drain extensions. The portions on the doped extensions laterally form a direct contact with the doped source/drain extension. Any low resistance material layer on the gate is separated from the low resistance material portions on the source/drain extensions.

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