High performance CMOS with metal-gate and Schottky source/drain

Details High performance CMOS with metal-gate and Schottky source/drain High performance CMOS with metal-gate and Schottky source/drain

2007-02-13

2007-02-13

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S387000, C257S388000, C257S412000, C257S413000, C257S453000, C257S454000, C257S455000, C257S456000, C257S471000, C257S483000, C257S485000, C257S486000

Reexamination Certificate

active

11134897

ABSTRACT:
A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode having a work function of less than about 4.3 eV or greater than about 4.9 eV overlying the gate dielectric, a spacer having a thickness of less than about 100 Å on a side of the gate electrode, and a Schottky source/drain having a work function of less than about 4.3 eV or greater than about 4.9 eV wherein the Schottky source/drain region overlaps the gate electrode. The Schottky source/drain region preferably has a thickness of less than about 300 Å.

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