Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-08-14
2011-11-29
Menz, Laura (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S213000
Reexamination Certificate
active
08067280
ABSTRACT:
An integrated circuit having high performance CMOS devices with good short channel effects may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; and thermal annealing the substrate when forming the spacers, the thermal annealing performed at an ultra-low temperature. An integrated circuit having high performance CMOS devices with low parasitic junction capacitance may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; performing a low dosage source/drain implant; and performing a high dosage source/drain implant.
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Hu Chenming
Wang Chih-Hao
Wang Ta-Wei
Duane Morris LLP
Kouh Won Joon
Menz Laura
Taiwan Semiconductor Manufacturing Co. Ltd.
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