Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S151000, C438S216000
Reexamination Certificate
active
07993999
ABSTRACT:
A device and method for fabrication of fin devices for an integrated circuit includes forming fin structures in a semiconductor material of a semiconductor device wherein the semiconductor material is exposed on sidewalls of the fin structures. A donor material is epitaxially deposited on the exposed sidewalls of the fin structures. A condensation process is applied to move the donor material through the sidewalls into the semiconductor material such that accommodation of the donor material causes a strain in the semiconductor material of the fin structures. The donor material is removed, and a field effect transistor is formed from the fin structure.
REFERENCES:
Tezuka, T., et al., “Dislocation-Free Formation of Relaxed Sige-On-Insulator Layers”, Applied Physics Letters. vol. 80, No. 19. May 2002. pp. 3560-3562.
Basker Veeraraghavan S.
Cheng Kangguo
Doris Bruce B.
Faltermeier Johnathan E.
Khakifirooz Ali
International Business Machines - Corporation
Percello, Esq. Louis J.
Pham Long
Tutunjian & Bitetto, P.C.
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