High-k dielectric materials and processes for manufacturing...

Details High-k dielectric materials and processes for manufacturing... High-k dielectric materials and processes for manufacturing...

2005-03-02

2009-06-09

Smith, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C438S240000

Reexamination Certificate

active

07544987

ABSTRACT:
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

REFERENCES:
patent: 4152490 (1979-05-01), Witzke
patent: 4585312 (1986-04-01), Ishiwata et al.
patent: 5189503 (1993-02-01), Suguro et al.
patent: 5195018 (1993-03-01), Kwon et al.
patent: 5225286 (1993-07-01), Fujikawa et al.
patent: 5290609 (1994-03-01), Horiike et al.
patent: 5362632 (1994-11-01), Mathews
patent: 5387480 (1995-02-01), Haluska et al.
patent: 5569619 (1996-10-01), Roh
patent: 5589733 (1996-12-01), Noda et al.
patent: 5719425 (1998-02-01), Akram et al.
patent: 5719607 (1998-02-01), Hasegawa et al.
patent: 5793057 (1998-08-01), Summerfelt
patent: 5841186 (1998-11-01), Sun et al.
patent: 5859760 (1999-01-01), Park et al.
patent: 5866460 (1999-02-01), Akram et al.
patent: 5910880 (1999-06-01), DeBoer et al.
patent: 5981333 (1999-11-01), Parekh et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5985714 (1999-11-01), Sandhu et al.
patent: 5985732 (1999-11-01), Fazan et al.
patent: 6037235 (2000-03-01), Narwankar et al.
patent: 6200874 (2001-03-01), Sandhu et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6207561 (2001-03-01), Hwang et al.
patent: 6215650 (2001-04-01), Gnade et al.
patent: 6218256 (2001-04-01), Agarwal
patent: 6248640 (2001-06-01), Nam
patent: 6265260 (2001-07-01), Alers et al.
patent: 6284655 (2001-09-01), Marsh
patent: 6303426 (2001-10-01), Alers
patent: 6339009 (2002-01-01), Lee et al.
patent: 6352865 (2002-03-01), Lee et al.
patent: 6362068 (2002-03-01), Summerfelt et al.
patent: 6387749 (2002-05-01), Lim
patent: 6391801 (2002-05-01), Yang
patent: 6403415 (2002-06-01), Alers et al.
patent: 6448128 (2002-09-01), Lee et al.
patent: 6451646 (2002-09-01), Lu et al.
patent: 6541330 (2003-04-01), Lee et al.
patent: 6548368 (2003-04-01), Narwankar et al.
patent: 6599807 (2003-07-01), Lim et al.
patent: 6737716 (2004-05-01), Matsuo et al.
patent: 7018868 (2006-03-01), Yang et al.
patent: 2002/0074584 (2002-06-01), Yang
patent: 2002/0164863 (2002-11-01), Murphy
patent: 2005/0224897 (2005-10-01), Chen et al.
patent: 2005/0287751 (2005-12-01), Mehrad et al.
Kamada et al., “Structure and Properties of Silicon Titanium Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Method”, Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec. 1991, pp. 3594-3596.

Affiliated with

Also associated with

Rating

High-k dielectric materials and processes for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-k dielectric materials and processes for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-k dielectric materials and processes for manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4096543