High-k dielectric materials and processes for manufacturing...

Details High-k dielectric materials and processes for manufacturing... High-k dielectric materials and processes for manufacturing...

2005-03-01

2005-03-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000, C438S239000

Reexamination Certificate

active

06861695

ABSTRACT:
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

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