High K dielectric material and method of making a high K...

Details High K dielectric material and method of making a high K... High K dielectric material and method of making a high K...

2003-11-24

2008-11-25

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C428S689000

Reexamination Certificate

active

07456064

ABSTRACT:
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge density and the conduction current of the dielectric material.

REFERENCES:
patent: 3620780 (1971-11-01), Economy et al.
patent: 4837123 (1989-06-01), Kato et al.
patent: 6066219 (2000-05-01), Schulz-Harder et al.
patent: 6133119 (2000-10-01), Yamazaki
patent: 6184072 (2001-02-01), Kaushik et al.
patent: 6262850 (2001-07-01), Krisko et al.
patent: 6292302 (2001-09-01), Krisko et al.
patent: 6380687 (2002-04-01), Yamazaki
patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6458512 (2002-10-01), Budd et al.
patent: 6527830 (2003-03-01), Neu et al.
patent: 6576482 (2003-06-01), Aggarwal et al.
patent: 6624013 (2003-09-01), Kawasaki et al.
patent: 6624049 (2003-09-01), Yamazaki
patent: 6671109 (2003-12-01), Kunii
patent: 6680130 (2004-01-01), Manchanda et al.
patent: 6703277 (2004-03-01), Paton et al.
patent: 6844249 (2005-01-01), Kawasaki et al.
patent: 6893746 (2005-05-01), Kirino et al.
patent: 6984573 (2006-01-01), Yamazaki et al.
patent: 7045438 (2006-05-01), Yamazaki et al.
patent: 7083870 (2006-08-01), Shimizu et al.
patent: 2001/0041304 (2001-11-01), Uno et al.
patent: 2002/0146874 (2002-10-01), Kawasaki et al.
patent: 2003/0025118 (2003-02-01), Yamazaki et al.
patent: 2003/0189210 (2003-10-01), Yamazaki et al.
patent: 2003/0224218 (2003-12-01), Manchanda et al.
patent: 2004/0007706 (2004-01-01), Yamazaki et al.
patent: 2004/0023073 (2004-02-01), Shimizu et al.
patent: 2004/0040938 (2004-03-01), Yamazaki et al.
patent: 2004/0057157 (2004-03-01), Shimizu et al.
patent: 2004/0072383 (2004-04-01), Nagahama et al.
patent: 2004/0092061 (2004-05-01), Kawasaki et al.
patent: 2004/0099899 (2004-05-01), Manchanda et al.
patent: 2004/0106016 (2004-06-01), Okada et al.
patent: 2004/0254419 (2004-12-01), Wang et al.
patent: 2005/0017319 (2005-01-01), Manabe et al.
patent: 2005/0025797 (2005-02-01), Wang et al.
patent: 2005/0079132 (2005-04-01), Wang et al.
patent: 2005/0080166 (2005-04-01), Keller et al.
patent: 2005/0089799 (2005-04-01), Otoba et al.
patent: 2005/0107870 (2005-05-01), Wang et al.
patent: 2005/0119725 (2005-06-01), Wang et al.
patent: 2005/0149002 (2005-07-01), Wang et al.
patent: 2005/0149169 (2005-07-01), Wang et al.
patent: 2005/0155779 (2005-07-01), Wang et al.
patent: 2005/0165471 (2005-07-01), Wang et al.
patent: 2005/0216075 (2005-09-01), Wang et al.
patent: 2005/0230752 (2005-10-01), Kanno et al.
patent: 2006/0009016 (2006-01-01), Yamazaki et al.
patent: 2006/0027817 (2006-02-01), Yamazaki et al.
patent: 2006/0033867 (2006-02-01), Krisko et al.
patent: 2006/0079039 (2006-04-01), Ohtani et al.
patent: 2006/0102871 (2006-05-01), Wang et al.
patent: 2006/0118758 (2006-06-01), Wang et al.
patent: 2006/0128118 (2006-06-01), Nagahama et al.
patent: 2006/0142853 (2006-06-01), Wang et al.
patent: 2006/0226517 (2006-10-01), Iwanaga et al.
patent: 2006/0257582 (2006-11-01), Keller et al.

Affiliated with

Also associated with

Rating

High K dielectric material and method of making a high K... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High K dielectric material and method of making a high K..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High K dielectric material and method of making a high K... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4036011