Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S774000
Reexamination Certificate
active
07095073
ABSTRACT:
An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF and analog circuit applications. For the high dielectric constant MIM capacitor, the metal is comprised of copper electrodes in a dual damascene process. The dielectric constant versus the total thickness of super lattices is controlled by the number of layers either 4/4, 2/2, and 1/1 artificial layers. Hence thickness of the film can be easily controlled. Enhancement of dielectric constant is because of interface. Dielectric constants near 900 can be easily achieved for 250 Angstrom thick super lattices. MBE, molecular beam epitaxy or ALCVD, atomic layer CVD techniques is used for this type layer growth process.
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Ang Chew Hoe
Balakumar Subramanian
Proctor Paul
Zheng Jia Zhen
Ackerman Stephen B.
Booth Richard A.
Chartered Semiconductor Manufacturing Ltd.
Saile Ackerman LLC
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