Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-16
2010-06-29
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29174
Reexamination Certificate
active
07745882
ABSTRACT:
A method for forming a bipolar junction transistor comprises forming a first well of a second conductive type for forming a collector region in a substrate including device isolation layers, wherein the substrate comprises a first conductive type, forming a second well of the first conductive type for a metal-oxide-semiconductor transistor of the second conductive type within the first well of the second conductive type, wherein the second well of the first conductive type is formed deeper than the device isolation layers, forming a shallow third well of the first conductive type for a base region within the first well of the second conductive type, wherein the shallow third well of the first conductive type is formed shallower than the device isolation layers, and simultaneously forming an emitter region within the shallow third well of the first conductive type and a plurality of collector contacts within the first well of the second conductive type by performing an ion implantation process for forming source/drain regions of the metal-oxide-semiconductor transistor of the second conductive type.
REFERENCES:
patent: 5015594 (1991-05-01), Chu et al.
patent: 5066602 (1991-11-01), Takemoto et al.
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5502317 (1996-03-01), Duvvury
patent: 6030864 (2000-02-01), Appel et al.
patent: 6630377 (2003-10-01), Panday et al.
patent: 6667202 (2003-12-01), Suzuki
patent: 6737721 (2004-05-01), Suzuki
patent: 2004/0007713 (2004-01-01), Sakuragi
patent: 2004/0195586 (2004-10-01), Suzuki
patent: 2000-0066696 (2000-11-01), None
Belousov Alexander
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Smith Bradley K
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