High frequency semiconductor wafer processing apparatus and meth

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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31511121, 118723E, H05H 100

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active

058491368

ABSTRACT:
A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.

REFERENCES:
patent: 3763031 (1973-10-01), Slow
patent: 3860507 (1975-01-01), Vossen, Jr.
patent: 4340456 (1982-07-01), Robinson
patent: 4373581 (1983-02-01), Toellner
patent: 4375051 (1983-02-01), Theall
patent: 4438368 (1984-03-01), Abe
patent: 4496448 (1985-01-01), Tai et al.
patent: 4513022 (1985-04-01), Jansen et al.
patent: 4521286 (1985-06-01), Horwitz
patent: 4526643 (1985-07-01), Okano et al.
patent: 4572759 (1986-02-01), Benzing
patent: 4585668 (1986-04-01), Asmussen et al.
patent: 4617079 (1986-10-01), Tracy
patent: 4626312 (1986-12-01), Tracy
patent: 4673589 (1987-06-01), Standley
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4785962 (1988-11-01), Toshima
patent: 4808258 (1989-02-01), Otsuto et al.
patent: 4842707 (1989-06-01), Kinoshita
patent: 4863549 (1989-09-01), Grunwald
patent: 4887005 (1989-12-01), Rough
patent: 4906898 (1990-03-01), Moisan
patent: 4915979 (1990-04-01), Ishida et al.
patent: 4951009 (1990-08-01), Collins
patent: 5016564 (1991-05-01), Nakamura
patent: 5032202 (1991-07-01), Tsai
patent: 5032205 (1991-07-01), Hershkowitz
patent: 5078851 (1992-01-01), Nishihata
Professor Tadahiro Ohmi, "From Alchemy to Science: Technological Chanlenges" from a handout given at a talk on Sep. 1, 1989.
S.M. Sze, "VLSI Technology", pp. 107-108; McGraw-Hill; 1983.

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