Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-06-25
2010-11-09
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S163000, C365S171000, C365S173000, C365S175000, C365S225700
Reexamination Certificate
active
07830697
ABSTRACT:
A nonvolatile memory device includes at least one memory cell which comprises a diode and a metal oxide antifuse dielectric layer, and a first electrode and a second electrode electrically contacting the at least one memory cell. In use, the diode acts as a read/write element of the memory cell by switching from a first resistivity state to a second resistivity state different from the first resistivity state in response to an applied bias.
REFERENCES:
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4665428 (1987-05-01), Hockley et al.
patent: 5432729 (1995-07-01), Carson et al.
patent: 5559732 (1996-09-01), Birge
patent: 5693556 (1997-12-01), Cleeves
patent: 5745407 (1998-04-01), Levy et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5915167 (1999-06-01), Leedy
patent: 5962911 (1999-10-01), Manley
patent: 5991193 (1999-11-01), Gallagher et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6111784 (2000-08-01), Nishimura et al.
patent: 6236587 (2001-05-01), Gudesen et al.
patent: 6306718 (2001-10-01), Singh et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6486065 (2002-11-01), Vyvoda et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6541312 (2003-04-01), Vyvoda et al.
patent: 6567301 (2003-05-01), Anthony et al.
patent: 6584029 (2003-06-01), Tran et al.
patent: 6677220 (2004-01-01), Van Brocklin et al.
patent: 6689644 (2004-02-01), Johnson
patent: 6693823 (2004-02-01), Brown
patent: 6777773 (2004-08-01), Knall
patent: 6834008 (2004-12-01), Rinerson et al.
patent: 6844564 (2005-01-01), Tanaka et al.
patent: 6879508 (2005-04-01), Tran
patent: 6881994 (2005-04-01), Lee et al.
patent: 6946719 (2005-09-01), Petti et al.
patent: 6951780 (2005-10-01), Herner
patent: 6952030 (2005-10-01), Herner et al.
patent: 6952043 (2005-10-01), Vyvoda et al.
patent: 7038248 (2006-05-01), Lee
patent: 7176064 (2007-02-01), Herner
patent: 7190602 (2007-03-01), Johnson et al.
patent: 7450414 (2008-11-01), Scheuerlein
patent: 7486537 (2009-02-01), Scheuerlein et al.
patent: 7488625 (2009-02-01), Knall
patent: 7542338 (2009-06-01), Scheuerlein et al.
patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2004/0016991 (2004-01-01), Herner et al.
patent: 2004/0228159 (2004-11-01), Kostylev et al.
patent: 2004/0232509 (2004-11-01), Vyvoda et al.
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2005/0098800 (2005-05-01), Herner et al.
patent: 2005/0121742 (2005-06-01), Petti et al.
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.
patent: 2005/0226067 (2005-10-01), Herner et al.
patent: 2006/0006495 (2006-01-01), Herner et al.
patent: 2006/0250836 (2006-11-01), Herner et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2007/0002603 (2007-01-01), Cleeves
patent: 2007/0069217 (2007-03-01), Herner et al.
patent: 2007/0069276 (2007-03-01), Scheuerlein
patent: 2007/0072360 (2007-03-01), Kumar et al.
patent: 2007/0114509 (2007-05-01), Herner
patent: 1 450 373 (2004-08-01), None
patent: WO 2004/055827 (2004-07-01), None
Yang et al., Patent Application Publication US 2007/0069241 Al (U.S. Appl. No. 11/173,973).
U.S. Appl. No. 10/095,962, filed Mar. 13, 2002, Herner et al.
U.S. Appl. No. 10/185,507, filed Jun. 27, 2002, Vyvoda et al.
U.S. Appl. No. 10/440,882, filed May 19, 2003, Vyvoda et al.
U.S. Appl. No. 10/728,436, filed Dec. 5, 2003, Chen.
U.S. Appl. No. 10/728,451, filed Dec. 5, 2003, Cleeves et al.
U.S. Appl. No. 10/815,312, filed Apr. 1, 2004, Chen.
U.S. Appl. No. 10/883,417, filed Jun. 30, 2004, Raghuram et al.
U.S. Appl. No. 10/954,510, filed Sep. 29, 2004, Herner.
U.S. Appl. No. 10/148,530, filed Jun. 8, 2006, Herner et al.
U.S. Appl. No. 11/395,995, filed Mar. 31, 2006, Herner et al.
U.S. Appl. No. 11/444,936, filed May 31, 2006, Radigan et al.
U.S. Appl. No. 11/693,858, filed Mar. 30, 2007, Kumar et al.
U.S. Appl. No. 11/819,079, filed Jun. 25, 2007, Herner.
Alavi et al, “A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process”, IEDM 1997.
Amemiya et al., “Electrical Trimming of Heavily Doped Polycrystalline Silicon Resistors”, IEEE Transactions Electron Devices, vol. ED-26, No. 11, Nov. 1979.
Babcock, J. A. et al., “Polysilicon Resistor Trimming for Packaged Integrated Circuits”, IEDM 93, 1993, pp. 247-250.
Babcock, J. A. et al., “Precision Electrical Trimming of Very Low TCR Poly-Sige Resistors,” IEEE Service Center, vol. 21, No. 6, Jun. 2000, pp. 283-285, abstract Figs. 2, 4.
Das, Soumen et al., “Electrical Trimming of Ion-Beam-Sputtered Polysilicon Resistors by High Current Pulses”, IEEE Transaction of Electron Devices, vol. 41, No. 8, pp. 1429-1434, Aug. 1994.
Feldbaumer, D. W. et al., “Theory and Application of Polysilicon Resistor Trimming”, Solid-State Electronics, vol. 38, No. 11, 1995, pp. 1861-1869.
Feldbaumer, D.W., “Pulse Current Trimming of Polysilicon Resistors”, IEEE Transactions on Electron Devices, vol. 42, No. 4, pp. 689-696, Apr. 1995.
Kato, Kotaro et al., “A Monolithic 14 Bit D/A Converter Fabricated with a New Trimming Technique (DOT)”, IEEE Journal of Solid-State Circuits, vol. SC-19, No. 5, pp. 802-804-806, Oct. 1984.
Kato, Kotaro et al., “A Physical Mechanism of Current-Induced Resistance Decrease in Heavily Doped Polysilicon Resistors”, IEEE Transaction on Electron Devices, vol. ED-29, No. 8, pp. 1156-1160, Aug. 1982.
Kato, Kotaro et al., “Change in Temperature Coefficient of Resistance of Heavily Doped Polysilicon Resistors Caused by Electrical Trimming”, Jpn. J. Appl. Phys., vol. 35, Part 1, No. 8, pp. 14209-14215, Aug. 1996.
Lane, William A., “The Design of Thin-Film Polysilicon Resistors for Analog IC Applications”, IEEE Transactions on Electron Devices, vol. 36, No. 4, pp. 738-744, Apr. 1989.
Tobita, Toshio, “New Trimming Technology of a Thick Film Resistor by the Pulse Voltage Method”, IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. 14, No. 3, pp. 613-617, Sep. 1991.
International Search Report dated Oct. 6, 2008 received in corresponding International Application No. PCT/US2008/007802 (4 pgs.).
Office Action, mailed Aug. 13, 2009, received in co-pending U.S. Appl. No. 11/819,079.
Notice of Allwability received in U.S. Appl. No. 11/819,079.
Phan Trong
SanDisk 3D LLC
The Marbury Law Group PLLC
LandOfFree
High forward current diodes for reverse write 3D cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High forward current diodes for reverse write 3D cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High forward current diodes for reverse write 3D cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4252257