High flow vacuum chamber including equipment modules such as a p

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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118723R, 118725, 118728, 118733, 156345, 216 67, 216 68, 216 69, 279128, 427569, 427570, 427571, 427573, 427575, H01L 21306, H01L 213065, H05H 100

Patent

active

059487046

ABSTRACT:
A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

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