High etch rate residue free metal etch process with low frequenc

Details High etch rate residue free metal etch process with low frequenc High etch rate residue free metal etch process with low frequenc

1994-09-16

1998-07-21

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566431, 1566461, 216 41, 216 67, 216 74, 216 75, 216 77, 216 78, H01L 2102

Patent

active

057831017

ABSTRACT:
The plasma source power frequency in a plasma etch reactor is reduced to a low RF frequency such as about 2 MHz. It is a discovery of this invention that at this low frequency, capacitive coupling from the plasma power source is reduced, and the plasma source power level may be increased beyond 750 Watts to reduce capacitive coupling and provide a high density inductively coupled plasma without appreciably increasing the ion bombardment energy. Moreover, under these conditions the etchant (e.g., chlorine) concentration in the plasma may be increased to about 80 percent without decreasing etch uniformity to provide a very high metal alloy etch rate with complete residue removal, no profile microloading, and no etch rate microloading, the process being applicable over a wide window of metal alloy compositions.

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Givens, J. et al. "Selective Dry Etching in a High Density Plasma for 0.5 UM Complementary Metal-Oxide-Semiconductor." Journal of Vacuum Science and Technology: Part B, vol. 12, No. 1, Jan. 1, 1994, pp. 427-432.

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