High efficiency charge pump circuit

Static information storage and retrieval – Read/write circuit – Precharge

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Details

36518906, 36518909, 3072962, G11C 700

Patent

active

050234650

ABSTRACT:
An integrated circuit device includes a charge pump to provide current at a potential which is greater than a supply potential. A potential maintenance circuit gates on when the potential at the output of the charge pump circuit drops to a level which is below V.sub.CC. The potential maintenance circuit permits the charge pump can be bypassed or designed to provide a minimum current output. An overvoltage shutoff circuit permits the charge pump to be effectively bypassed when supply voltage is sufficiently high to make bypass desireable.

REFERENCES:
patent: 4404661 (1983-09-01), Nagayama
patent: 4471290 (1984-09-01), Yamaguchi
patent: 4616143 (1986-10-01), Miyamoto
patent: 4689495 (1987-08-01), Liu
patent: 4769784 (1988-09-01), Doluca et al.
patent: 4804870 (1989-02-01), Mahmud
patent: 4896297 (1990-01-01), Miyatake et al.
patent: 4901208 (1990-02-01), Patel
patent: 4954731 (1990-09-01), Dhong et al.

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