High-dielectric film substrate processing method

Details High-dielectric film substrate processing method High-dielectric film substrate processing method

2007-04-25

2010-12-28

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S775000, C438S778000, C438S791000, C438S508000

Reexamination Certificate

active

07858509

ABSTRACT:
A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

REFERENCES:
patent: 2005/0106896 (2005-05-01), Fukuchi
patent: 2005/0282400 (2005-12-01), Xiao et al.
patent: 2004 253777 (2004-09-01), None
patent: 2006 40977 (2006-02-01), None
patent: 03 049173 (2003-06-01), None

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