High dielectric constant barium-strontium-niobium oxides for int

Details High dielectric constant barium-strontium-niobium oxides for int High dielectric constant barium-strontium-niobium oxides for int

1997-06-12

1998-05-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, H01L 2976

Patent

active

057510342

ABSTRACT:
A charge storage device, such as an integrated circuit memory, including a dielectric comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode. The precursor is baked and annealed to form a dielectric having the formula Ba.sub.x Sr.sub.y Nb.sub.z O.sub.30, where x=1.3 to 3.5, y=1.5 to 3.7, and z=10. A top platinum electrode is then formed to provide a memory cell capacitor. Optimum results to date have been obtained with Ba.sub.2 Sr.sub.3 Nb.sub.10 O.sub.30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10.sup.-5 amperes per square centimeter for voltages up to 5 volts.

REFERENCES:
patent: 5011796 (1991-04-01), Bridger et al.
patent: 5124777 (1992-06-01), Lee
patent: 5173835 (1992-12-01), Cornett et al.
patent: 5471363 (1995-11-01), Mihara

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