High density VMOS electrically programmable ROM

Details High density VMOS electrically programmable ROM High density VMOS electrically programmable ROM

1979-01-02

1982-03-30

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

307279, 365103, G11C 1140

Patent

active

043228224

ABSTRACT:
An electrically programmable memory array is made by a process in which the memory elements are capacitor devices formed in anisotropically etched V-grooves to provide enhanced dielectric breakdown at the apex of the groove. After breakdown, a cell exhibits a low resistance to a grounded substrate. Access transistors in series with the memory elements have control gates which also form address lines. The oxide thickness in the V-groove may be thinner than the gate oxide thickness for the access transistor providing a lower programming voltage. These factors provide a very small high speed device.

REFERENCES:
patent: 3091754 (1963-05-01), Nazare
patent: 3245051 (1966-04-01), Robb
patent: 3641516 (1972-02-01), Castrucci et al.
patent: 3979612 (1976-09-01), Mudge et al.
patent: 4109270 (1978-08-01), Von Basse et al.
patent: 4116720 (1978-09-01), Vinson
patent: 4156289 (1979-05-01), Hoffman et al.
"Outlook" Electronics Products Magazine, p. 17, Nov. 1979.
IBM Tech. Dis. Bul., vol. 20, No. 10, Mar. 78, "V-Grooved Charge-Coupled Device" K.K.liu p. 3851.

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