High density trench power MOSFET structure and fabrication...

Details High density trench power MOSFET structure and fabrication... High density trench power MOSFET structure and fabrication...

2005-04-26

2005-04-26

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257S329000

Reexamination Certificate

active

06884684

ABSTRACT:
A high density trench power-MOSFET is described in the present invention. The power-MOSFET has a substrate, first and second epi-layers sequentially formed over the substrate and a trench type gate electrode. A silicon nitride layer is formed over the gate electrode to prevent an electrical connecting between the gate electrode and the metal layer formed in a later process.

REFERENCES:
patent: 6015737 (2000-01-01), Tokura et al.
patent: 6198127 (2001-03-01), Kocon

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