High density transistor component and its manufacturing method

Details High density transistor component and its manufacturing method High density transistor component and its manufacturing method

1998-04-21

2000-01-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438222, 438296, 438301, H01L 218238, H01L 21336

Patent

active

060109289

ABSTRACT:
A high density transistor component and its manufacturing method which includes the steps of forming a pad oxide layer above a silicon substrate, forming a dielectric layer above the pad oxide layer, and growing an epitaxial silicon layer above the pad oxide layer covering the pad oxide layer as well as the dielectric layer. Source/drain regions including the heavily doped source/drain and the lightly doped source/drain are formed in the epitaxial silicon layer, and a gate terminal region composed from an assembly of a gate oxide layer, a gate terminal and two spacers is formed above the epitaxial silicon layer. The channel is located in the spatial location between the dielectric layer, the gate region and the source/drain regions.

REFERENCES:
patent: 5055427 (1991-10-01), Haskell
patent: 5273921 (1993-12-01), Neudeck et al.
patent: 5289027 (1994-02-01), Terrill et al.
patent: 5627097 (1997-05-01), Venkatesan et al.

Affiliated with

Also associated with

Rating

High density transistor component and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density transistor component and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density transistor component and its manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072172