High-density three-dimensional memory cell

Details High-density three-dimensional memory cell High-density three-dimensional memory cell

2005-10-04

2005-10-04

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C365S065000, C365S117000

Reexamination Certificate

active

06952030

ABSTRACT:
A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element preferably comprises two diode portions and an antifuse. Above the semiconductor element are additional conductors and semiconductor elements in multiple stones of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

REFERENCES:
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6111784 (2000-08-01), Nishimura
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6567301 (2003-05-01), Anthony et al.
patent: 6584029 (2003-06-01), Tran et al.
patent: 6693823 (2004-02-01), Brown

Affiliated with

Also associated with

Rating

High-density three-dimensional memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-density three-dimensional memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density three-dimensional memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3456563