High density stepped, non-planar nitride read only memory

Details High density stepped, non-planar nitride read only memory High density stepped, non-planar nitride read only memory

2006-11-21

2006-11-21

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S321000, C257S324000

Reexamination Certificate

active

07138681

ABSTRACT:
A non-planar, stepped NROM array is comprised of cells formed in trenches and on pillars that are etched into a substrate. Each cell has a plurality of charge storage regions in its nitride layer and a pair of source/drain regions that are shared with adjacent cells in a column. The source/drain regions, formed in the pillar/trench sidewalls, couple the column cells serially into bitlines. The rows of the array are each coupled by a wordline. A second set of trenches separates the columns of cells.

REFERENCES:
patent: 6555870 (2003-04-01), Kirisawa
patent: 6583479 (2003-06-01), Fastow
patent: 6627945 (2003-09-01), Tripsas
patent: 6670246 (2003-12-01), Hsiao
patent: 6720217 (2004-04-01), Kim

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