High-density split-gate FinFET

Details High-density split-gate FinFET High-density split-gate FinFET

2005-10-11

2005-10-11

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S283000

Reexamination Certificate

active

06953726

ABSTRACT:
Disclosed is a method and structure for forming a split-gate fin-type field effect transistor (FinFET). The invention produces a split-gate fin-type field effect transistor (FinFET) that has parallel fin structures. Each of the fin structures has a source region at one end, a drain region at the other end, and a channel region in the middle portion. Back gate conductors are positioned between channel regions of alternating pairs of the fin structures and front gate conductors are positioned between channel regions of opposite alternating pairs of the fin structures. Thus, the back gate conductors and the front gate conductors are alternatively interdigitated between channel regions of the fin structures.

REFERENCES:
patent: 6316296 (2001-11-01), Sakamoto
patent: 6339002 (2002-01-01), Chan et al.
patent: 6346446 (2002-02-01), Ritenour
patent: 6413802 (2002-07-01), Hu et al.
patent: 6433609 (2002-08-01), Voldman
patent: 6833569 (2004-12-01), Dokumaci et al.
patent: 2002/0093053 (2002-07-01), Chan et al.
patent: 2002/0098657 (2002-07-01), Alavi et al.
patent: 2002/0105039 (2002-08-01), Hanafi et al.

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