Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-09-04
2011-12-06
Nguyen, Dang (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S175000, C438S104000
Reexamination Certificate
active
08072793
ABSTRACT:
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of memory cells located between word lines and bit lines. Each memory cell comprises a diode and a plurality of memory elements each comprising one or more metal-oxygen compounds, the diode and the plurality of memory elements arranged in electrical series along a current path between a corresponding word line and a corresponding bit line.
REFERENCES:
patent: 5963472 (1999-10-01), Inada et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6664117 (2003-12-01), Zhuang et al.
patent: 6673691 (2004-01-01), Zhuang et al.
patent: 6759249 (2004-07-01), Zhuang et al.
patent: 6849891 (2005-02-01), Hsu et al.
patent: 6952038 (2005-10-01), Hsu et al.
patent: 7009278 (2006-03-01), Hsu
patent: 7177169 (2007-02-01), Scheuerlein
patent: 7361924 (2008-04-01), Breuil et al.
patent: 7800094 (2010-09-01), Ho et al.
patent: 2003/0002338 (2003-01-01), Xu et al.
patent: 2006/0033182 (2006-02-01), Hsu
patent: 2006/0097238 (2006-05-01), Breuil et al.
patent: 2006/0273298 (2006-12-01), Petti
patent: 2006/0284281 (2006-12-01), Hsu
patent: 2007/0048990 (2007-03-01), Zhuang et al.
patent: 2007/0114508 (2007-05-01), Herner et al.
patent: 2008/0206931 (2008-08-01), Breuil et al.
patent: 2009/0135637 (2009-05-01), Takase
patent: 2009/0180310 (2009-07-01), Shimomura et al.
Hsieh Kuang Yeu
Lai Erh-Kun
Lee Ming-Daou
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Nguyen Dang
LandOfFree
High density resistance based semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density resistance based semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density resistance based semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4257024