Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-10-11
2005-10-11
Chen, Bret (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S255370, C427S535000, C438S789000
Reexamination Certificate
active
06953609
ABSTRACT:
A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.
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J. Yota, et al., “Comparison Between HDP CVD and PECVD Silicon Nitride for Advanced Interconnect Applications”, 0-7803-6327-2/00 2000 IEEE, pp. 76-78.
J. Yota, et al., “Comparitive Study on Inductively-coupled Plasma High-density Plasma, Plasma-enhanced, and Low Pressure Chemical Vapor Deposition Silicon Nitride Films”, J. Vac. Sci. Technol. A 18(2) Mar./Apr. 2000 0734-2101/2000/18(2)/372/5 2000 American Vacuum Society, pp. 372-375.
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European Search Report for EP 02 42 5615 dated May 7, 2003.
Chen Bret
Graybeal Jackson Haley LLP
Jorgenson Lisa K.
Rusyn Paul F.
STMicroelectronics S.r.l.
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