High density plasma deposition and etching apparatus

Details High density plasma deposition and etching apparatus High density plasma deposition and etching apparatus

1990-06-29

1992-02-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156345, 118728, 118 501, 118620, 118623, 427 38, B44C 122, B05D 306, C23C 1400

Patent

active

050910493

ABSTRACT:
The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

REFERENCES:
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4810935 (1989-03-01), Boswell
patent: 4828649 (1989-05-01), Davis et al.
patent: 4876983 (1989-10-01), Fukuda et al.

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