High density plasma deposition and etching apparatus

Details High density plasma deposition and etching apparatus High density plasma deposition and etching apparatus

1989-06-13

1991-02-05

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429807, 20429816, 20429833, 20429834, 20429837, 20429818, 20429819, 156345, 118723, 31511141, 42218605, C23C 1435

Patent

active

049902296

ABSTRACT:
The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

REFERENCES:
patent: 3247515 (1966-04-01), Boyer
patent: 3875068 (1975-03-01), Mitzel
patent: 4216405 (1980-08-01), Stenzel et al.
patent: 4368092 (1983-01-01), Steinberg et al.
patent: 4438368 (1984-03-01), Abe et al.
patent: 4438368 (1984-03-01), Abe et al.
patent: 4483737 (1984-11-01), Mante
patent: 4733133 (1988-03-01), Dandl
patent: 4810935 (1989-03-01), Boswell
patent: 4826585 (1989-02-01), Davis
patent: 4828649 (1989-05-01), Davis et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4876983 (1989-10-01), Fukuda et al.
Plasma Physics and Controlled Fusion, vol. 26, No. 10, pp. 1147-1162 (1984).

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