High density plasma CVD process for making dielectric anti-refle

Details High density plasma CVD process for making dielectric anti-refle High density plasma CVD process for making dielectric anti-refle

1998-06-15

2000-05-09

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 427167, 42725518, 42725537, 427255394, H05H 124, C23C 1630

Patent

active

060601329

ABSTRACT:
An improved process for preparing nitrogen containing substrates selected from the group consisting of silicon oxynitride, silicon nitride and titanium nitride films and silicon dioxide cap films characterized by prevent resist contamination when used as dielectric anti-reflective coatings, using a high density plasma CVD system, comprising: providing a processing chamber holding a wafer in a vacuum sufficient to enable O.sub.2 to be used as an oxygen source without risk of explosion in a plasma generating region of the processing chamber; introducing a gaseous mixture selected from the group consisting of SiH.sub.4 /O.sub.2 /N.sub.2 or SiH.sub.4 /O.sub.2 /N.sub.2 /Ar into the processing chamber; and subjecting the processing chamber to a RF electrical signal of sufficient frequency to create a high density plasma in the plasma generating region of said processing chamber, whereby said wafer is processed by resulting high density plasma generated by said RF electrical signal.

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