High density plasma CVD chamber

Details High density plasma CVD chamber High density plasma CVD chamber

2006-07-11

2006-07-11

Alejandro-Mulero, Luz (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With radio frequency antenna or inductive coil gas...

C118S7230IR

Reexamination Certificate

active

07074298

ABSTRACT:
The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

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patent: 6171438 (2001-01-01), Masuda et al.
patent: 0 838 843 (1998-04-01), None

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