High density plasma chemical vapor deposition process

Details High density plasma chemical vapor deposition process High density plasma chemical vapor deposition process

2006-09-19

2006-09-19

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S763000

Reexamination Certificate

active

07109132

ABSTRACT:
High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

REFERENCES:
patent: 5753044 (1998-05-01), Hanawa et al.
patent: 6846745 (2005-01-01), Papasouliotis et al.

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