Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S670000, C438S671000
Reexamination Certificate
active
07994052
ABSTRACT:
Methods for patterning high-density features are described herein. Embodiments of the present invention provide a method comprising patterning a first subset of a pattern, the first subset configured to form a plurality of lines over the substrate, and patterning a second subset of the pattern, the second subset configured to form a plurality of islands over the substrate, wherein said patterning the first subset and said patterning the second subset comprise at least two separate patterning operations.
REFERENCES:
patent: 7273812 (2007-09-01), Kim et al.
patent: 2003/0203284 (2003-10-01), Iriguchi et al.
Chang Runzi
Lee Peter
Lee Winston
Sutardja Pantas
Wei Chien-Chuan
Deo Duy-Vu N
Marvell International Ltd.
LandOfFree
High-density patterning does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density patterning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density patterning will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2658486