High-density nonvolatile memory cell

Details High-density nonvolatile memory cell High-density nonvolatile memory cell

1997-05-12

1999-12-07

Fahmy, Wael M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438561, 438700, H01L 21336

Patent

active

059982632

ABSTRACT:
A compact nonvolatile programmable memory cell. The memory cell has a floating gate (118), control gate (123), drain (108), and source regions (112). The memory cell is an electrically erasable programmable read only memory (EEPROM) cell or a Flash memory cell. Data may be stored the memory cell of the present invention for the required lifetime of the memory cell usage, and data is retained even when power is removed. The memory cell of the present invention has a substantially transverse or vertical channel (140), relative to a surface of a substrate. The memory may be used to create very high-density memory arrays.

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