Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S317000, C257SE27073, C257SE27004
Reexamination Certificate
active
08004033
ABSTRACT:
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; forming a first dielectric antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and forming a second conductor above the first dielectric antifuse.
REFERENCES:
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4665428 (1987-05-01), Hockley et al.
patent: 5432729 (1995-07-01), Carson et al.
patent: 5559732 (1996-09-01), Birge
patent: 5700737 (1997-12-01), Yu et al.
patent: 5745407 (1998-04-01), Levy et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5792569 (1998-08-01), Sun et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5877538 (1999-03-01), Williams
patent: 5915167 (1999-06-01), Leedy
patent: 5991193 (1999-11-01), Gallagher et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6111784 (2000-08-01), Nishimura
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6236587 (2001-05-01), Gudesen et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6534841 (2003-03-01), Van Brocklin et al.
patent: 6567301 (2003-05-01), Anthony et al.
patent: 6584029 (2003-06-01), Tran et al.
patent: 6611453 (2003-08-01), Ning
patent: 6627530 (2003-09-01), Li et al.
patent: 6635556 (2003-10-01), Herner
patent: 6664639 (2003-12-01), Cleeves et al.
patent: 6677220 (2004-01-01), Van Brocklin et al.
patent: 6689644 (2004-02-01), Johnson
patent: 6693823 (2004-02-01), Brown
patent: 6784517 (2004-08-01), Kleveland et al.
patent: 6853049 (2005-02-01), Herner
patent: 6879505 (2005-04-01), Scheuerlein
patent: 6946719 (2005-09-01), Petti et al.
patent: 6951780 (2005-10-01), Herner
patent: 6952030 (2005-10-01), Herner et al.
patent: 7026212 (2006-04-01), Herner et al.
patent: 7038248 (2006-05-01), Lee
patent: 7115967 (2006-10-01), Cleeves
patent: 7172840 (2007-02-01), Chen
patent: 7176064 (2007-02-01), Herner
patent: 7224013 (2007-05-01), Herner et al.
patent: 7238607 (2007-07-01), Dunton et al.
patent: 7265049 (2007-09-01), Herner et al.
patent: 7285464 (2007-10-01), Herner et al.
patent: 7307013 (2007-12-01), Raghuram et al.
patent: 7423304 (2008-09-01), Cleeves et al.
patent: 7474000 (2009-01-01), Scheuerlein
patent: 7511352 (2009-03-01), Vyvoda
patent: 7517796 (2009-04-01), Raghuram et al.
patent: 7557405 (2009-07-01), Herner et al.
patent: 7560339 (2009-07-01), Herner et al.
patent: 2003/0025176 (2003-02-01), Subramanian et al.
patent: 2003/0164491 (2003-09-01), Lee
patent: 2004/0002186 (2004-01-01), Vwoda et al.
patent: 2005/0012119 (2005-01-01), Herner et al.
patent: 2005/0026334 (2005-02-01), Knall
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2005/0098800 (2005-05-01), Herner et al.
patent: 2005/0221200 (2005-10-01), Chen
patent: 2005/0226067 (2005-10-01), Herner et al.
patent: 2006/0067117 (2006-03-01), Petti
patent: 2006/0249753 (2006-11-01), Herner et al.
patent: WO 2004/061851 (2004-07-01), None
Oct. 9, 2009 Office Action of related Chinese Application No. 200680027149.2.
Office Action of related U.S. Appl. No. 11/148,530 mailed Nov. 9, 2009.
Feb. 9, 2010 Reply to Nov. 9, 2009 Office Action of related U.S. Appl. No. 11/148,530.
Final Office Action of related U.S. Appl. No. 11/148,530 mailed Jun. 4, 2010.
Singh, D V., et al., “Abrupt phosphorus profiles in Si: Effects of temperature and substitutional carbon on phosphorus autodoping”, Journal of the Electrochemical Society, 150, (2003) G553-G556.
Written Opinion of International Application No. PCT/US2006/022023 mailed Sep. 21, 2006.
International Search Report of International Application No. PCT/US2006/022023 mailed Sep. 21, 2006.
International Preliminary Report on Patentability of International Application No. PCT/US2006/022023 issued Dec. 11, 2007.
Office Action of Europe Application No. 06 760 714.3 mailed Apr. 30, 2008.
Office Action and Search Report of Taiwan Application No. 095120206 issued Jun. 30, 2008.
Akerman, “Toward a Universal Memory”, Apr. 22, 2005, vol. 308, Science, 508-510.
Asuha, T. et al. “Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si”, Applied Physics Letters, vol. 81, No. 18 (10/28/02), 3410-3412.
Babcock, J.A. ,et al., “Polysilicon Resistor Trimming for Packaged Integrated Circuits”, IEDM 93 (1993),247-250.
Ellis, K. A. et al. “Phosphorus Diffusion in Silicon Oxide and Oxynitride Gate Dielectrics”, Electrochem, Sol. St. Lett. 2, (1999), 516-518.
Feldbaumer, D.W. et al. “Theory and Application of Polysilicon Resistor Trimming”, Solid-State Electronics, vol. 38 11, (1995), 1861-1869.
Hamada, T. et al., “Thin Inter-Polyoxide Films for Flash Memories Grown at Low Temperature (400°) by Oxygen Radicals”, IEEE Elect. Dev. Lett. vol. 22, No. 9, (Sep. 2001), 423-425.
Mahan, J. E. , “Threshold and Memory Switching in Polycrystalline Silicon”, Applied Physics Letter, 41, 5. (Sep. 1982) 479-481.
Malhotra et al., “Fundamentals of Memory Switching in Vertical Polycrystalline Silicon Structures”, IEEE Transactions on Electron Devices, ED-32 (11), 2441, (1985).
Malhotra, Vinod.,et al., “An Electrothermal Model of Memory Switching in Vertical Polycrystalline Silicon Structures”, IEEE Transactions on Electron Devices, vol. 35, 9, (Sep. 1988),1514-1523.
Nutzel, J.F., et al., “Comparison of P and Sb as n-dopants for Si molecular beam epitaxy”, J. Appl. Phys. 78 (2), (Jul. 15, 1995), 937-940.
Park, B., et al., “Study of contact resistance in in-situ phosphorus layer doped Si deposition process”, Electrochemical Society Proceedings 99-31, (1999), 34-45.
Raider, S. I. et al., “Abstract: Stoichiometry of SiO2/Si interfacial regions: I. Ultrathin oxide films”, J. Vac. Sci. Tech. vol. 13, No. 1, (Jan./Feb./76), 58.
Office Action of U.S. Appl. No. 11/866,403 mailed Feb. 13, 2008.
Notice of Allowance of U.S. Appl. No. 11/866,403 mailed Aug. 14, 2008.
Notice of Allowance of U.S. Appl. No. 11/866,403 mailed Jan. 21, 2009.
Notice of Allowance of U.S. Appl. No. 11/866,403 mailed Apr. 22, 2009.
Jun. 13, 2008 Reply to Feb. 13, 2008 Office Action of U.S. Appl. No. 11/866,403.
Herner et al., U.S. Appl. No. 10/326,470, filed Dec. 19, 2002.
Office Action of U.S. Appl. No. 11/401,073, mailed Oct. 26, 2007.
Notice of Allowance of U.S. Appl. No. 11/401,073, mailed Sep. 23, 2008.
Notice of Allowance of U.S. Appl. No. 11/401,073, mailed Mar. 3, 2009.
Mar. 26, 2008 Reply to Oct. 26, 2007 Office Action of U.S. Appl. No. 11/401,073.
Dec. 1, 2008 Reply Brief of U.S. Appl. No. 10/955,549.
Jul. 3, 2008 Amended Appeal Brief of U.S. Appl. No. 10/955,549.
Jun. 4, 2008 Notification of Non-Compliant Appeal Brief of U.S. Appl. No. 10/955,549.
May 27, 2008 Appeal Brief of U.S. Appl. No. 10/955,549.
Apr. 17, 2007 Appeal Brief of U.S. Appl. No. 10/955,549.
Jun. 6, 2008 Pre-Brief Appeal Conference decision of U.S. Appl. No. 11/148,530.
Apr. 23, 2008 Pre-Appeal Brief Request for Review of U.S. Appl. No. 11/148,530.
Aug. 12, 2008 Reply to Jun. 12, 2008 Ex Parte Quayle Office Action of U.S. Appl. No. 11/401,073.
Ex Parte Quayle Office Action of U.S. Appl. No. 11/401,073, mailed Jun. 12, 2008.
Herner et al., U.S. Appl. No. 12/481,684, filed Jun. 10, 2009.
Jul. 30, 2009 Reply to Apr. 30, 2009 Final Office Action of U.S. Appl. No. 11/148,530.
Final Office Action of U.S. Ap
Herner S. Brad
Mahajani Maitreyee
Dugan & Dugan PC
Le Dung A.
SanDisk 3D LLC
LandOfFree
High-density nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density nonvolatile memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2757886