High density MOSFET with raised source and drain regions

Details High density MOSFET with raised source and drain regions High density MOSFET with raised source and drain regions

1997-06-09

2000-03-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438303, H01L 21336

Patent

active

060431296

ABSTRACT:
A semiconductor substrate having a surface, a planarized field oxide region at the surface and a gate structure overlying the surface are provided. A sidewall spacer is formed adjacent to the gate structure and a polysilicon layer is formed overlying the substrate, the polysilicon layer having a raised first portion overlying the gate structure. A masking layer is formed overlying the polysilicon layer and then blanket etched to expose the raised first portion of the polysilicon layer which is subsequently removed. Since the raised first portion of the polysilicon layer is removed without using photolithography, high density MOSFETs are readily fabricated.

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